SiC Electronics

Design and Prototyping of SiC Power Electronics

Aegis Technology provides customized design and prototyping of the following SiC power electronics products.

Packaged SiC Switches

  • Single switch or arrays of switches mounted on aluminum nitride (AlN) or silicon nitride (Si3N4) substrates with copper (Cu), gold (Au), or molybdenum (Mo) metallization.

SiC Power Modules
Power modules are the key subsystems of a variety of power conversion systems.

  • Robust designs with single-phase, three-phase, half-bridge, and full-bridge configurations
  • Six-pack power modules comprising of alumina (Al2O3) and aluminum nitride (AlN) with Cu metallization.
  • Half-bridge power modules comprising of alumina (Al2O3), aluminum nitride (AlN) or silicon nitride (Si3N4) substrates with copper (Cu), gold (Au), and molybdenum (Mo) metallization.
  • Power ratings:  1 kW to 100 kW

SiC DC-AC Inverters and DC-DC Converters

  • SiC-based  and SiC/Si hybrid DC-AC inverters and DC-DC converters which integrate SiC power modules, high-temperature packaging, high-efficiency heatsinks, and gate drivers suitable for SiC devices
  • Power ratings:  1 kW to 100 kW

SiC Gate Drivers

  • High temperature capable and high frequency capable gate drivers for SiC power devices

photos_for_design_and_prototyping_of_sic_power_electronics3

a)  SiC Switch packaged on a AlN substrate
b)  6-pack SiC power modules
c)  5 kVA DC-AC SiC inverter
d)  Gate driver for SiC inverter
e)  SiC DC-DC converter